TY - JOUR
T1 - Characterization of Ni thin films following thermal oxidation in air
AU - De Los Santos Valladares, Luis
AU - Ionescu, Adrian
AU - Holmes, Stuart
AU - Barnes, Crispin H.W.
AU - Bustamante Domínguez, Angel
AU - Avalos Quispe, Oswaldo
AU - González, Juan C.
AU - Milana, Silvia
AU - Barbone, Matteo
AU - Ferrari, Andrea C.
AU - Ramos, Henry
AU - Majima, Yutaka
PY - 2014/9/1
Y1 - 2014/9/1
N2 - © 2014 American Vacuum Society. The authors study the thermal oxidation of nickel thin films (50nm) fabricated by conventional thermal evaporation, resulting from annealing in air at 300, 325, 350, 400, and 700°C. The characterization is performed by x-ray diffraction, Raman spectroscopy, superconducting quantum interference device magnetometry, and scanning electron microscopy. These techniques show that the oxidation increases with annealing temperature. The formation of granular films of coexisting Ni and NiO is confirmed after annealing at 400°C. The magnetic measurements indicate coexisting ferromagnetism and antiferromagnetism, corresponding to Ni and NiO contributions. The magnetic hysteresis loops reveal exchange bias in the samples annealed at 235, 350, and 400°C due to the competition between the exchange interactions at the Ni/NiO interfaces.
AB - © 2014 American Vacuum Society. The authors study the thermal oxidation of nickel thin films (50nm) fabricated by conventional thermal evaporation, resulting from annealing in air at 300, 325, 350, 400, and 700°C. The characterization is performed by x-ray diffraction, Raman spectroscopy, superconducting quantum interference device magnetometry, and scanning electron microscopy. These techniques show that the oxidation increases with annealing temperature. The formation of granular films of coexisting Ni and NiO is confirmed after annealing at 400°C. The magnetic measurements indicate coexisting ferromagnetism and antiferromagnetism, corresponding to Ni and NiO contributions. The magnetic hysteresis loops reveal exchange bias in the samples annealed at 235, 350, and 400°C due to the competition between the exchange interactions at the Ni/NiO interfaces.
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U2 - 10.1116/1.4895846
DO - 10.1116/1.4895846
M3 - Article
SN - 1071-1023
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ER -