Abstract
We analyze the current density-voltage characteristics of double-barrier tunneling diodes, with different spacer layers, within the framework of a Poisson solver together with a coherent tunneling approximation for transmission probabilities. We show that varying the spacer layer thickness, together with barrier heights, changes dramatically the current density-voltage characteristics line shape, which is revealed to be an important qualitative signature of the tunneling paths involved in the double-barrier diodes under operation.
| Original language | English |
|---|---|
| Pages (from-to) | 2675 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| DOIs | |
| State | Published - 1995 |
| Externally published | Yes |