Crystallization and electrical resistivity of Cu 2O and CuO obtained by thermal oxidation of Cu thin films on SiO 2/Si substrates

L. De Los Santos Valladares; D. Hurtado Salinas; A. Bustamante Dominguez; D. Acosta Najarro; S. I. Khondaker; T. Mitrelias; C. H.W. Barnes; J. Albino Aguiar; Y. Majima

doi:10.1016/j.tsf.2012.06.043

Crystallization and electrical resistivity of Cu ₂O and CuO obtained by thermal oxidation of Cu thin films on SiO ₂/Si substrates

L. De Los Santos Valladares, D. Hurtado Salinas, A. Bustamante Dominguez, D. Acosta Najarro, S. I. Khondaker, T. Mitrelias, C. H.W. Barnes, J. Albino Aguiar, Y. Majima

Research output: Contribution to journal › Article › peer-review

243 Scopus citations

Abstract

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO ₂/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu ₂O → Cu ₂O → Cu ₂O + CuO → CuO was detected. Pure Cu ₂O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases.

Original language	English
Pages (from-to)	6368-6374
Number of pages	7
Journal	Thin Solid Films
Volume	520
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2012.06.043
State	Published - 1 Aug 2012
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Academic Vice-Council of the Universidad Nacional Mayor de San Marcos through its Scientific Initiation Program (contract no. PIC — RR 04572-R-10 ). The work in Cambridge was supported by the European Union Program ALBAN (Grant no. E06D101257PE ) and the Cambridge Overseas Trust . The work in Japan was supported by the Japan Society for the Promotion of Science (Grant no. P12030 ), Grants-in-Aid for Scientific Research on Innovative Areas (No. 20108011 , π-Space) from the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Collaborative Research Project of the Materials and Structures Laboratory (Tokyo Institute of Technology ) and the World Class University Program, Sunchon National University, Korea . The work in Brazil has been supported by a CAPES grant . The authors are indebted to Dr. J. Llandro, from the University of Cambridge and Drs. Y. Azuma and N. Okabayashi from the Tokyo Institute of Technology for their help during different stages of the experiments.

Keywords

Annealing
Cupric oxide
Cuprous oxide
Evaporation
Thermal oxidation
Thin films
X-ray diffraction

Access to Document

10.1016/j.tsf.2012.06.043

Cite this

De Los Santos Valladares, L., Salinas, D. H., Dominguez, A. B., Najarro, D. A., Khondaker, S. I., Mitrelias, T., Barnes, C. H. W., Aguiar, J. A., & Majima, Y. (2012). Crystallization and electrical resistivity of Cu ₂O and CuO obtained by thermal oxidation of Cu thin films on SiO ₂/Si substrates. Thin Solid Films, 520(20), 6368-6374. https://doi.org/10.1016/j.tsf.2012.06.043

@article{2fedbe0611424150893368a062b9e454,

title = "Crystallization and electrical resistivity of Cu 2O and CuO obtained by thermal oxidation of Cu thin films on SiO 2/Si substrates",

abstract = "In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2O → Cu 2O → Cu 2O + CuO → CuO was detected. Pure Cu 2O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases.",

keywords = "Annealing, Cupric oxide, Cuprous oxide, Evaporation, Thermal oxidation, Thin films, X-ray diffraction",

author = "{De Los Santos Valladares}, L. and Salinas, {D. Hurtado} and Dominguez, {A. Bustamante} and Najarro, {D. Acosta} and Khondaker, {S. I.} and T. Mitrelias and Barnes, {C. H.W.} and Aguiar, {J. Albino} and Y. Majima",

year = "2012",

month = aug,

day = "1",

doi = "10.1016/j.tsf.2012.06.043",

language = "Ingl{\'e}s",

volume = "520",

pages = "6368--6374",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "20",

}

TY - JOUR

T1 - Crystallization and electrical resistivity of Cu 2O and CuO obtained by thermal oxidation of Cu thin films on SiO 2/Si substrates

AU - De Los Santos Valladares, L.

AU - Salinas, D. Hurtado

AU - Dominguez, A. Bustamante

AU - Najarro, D. Acosta

AU - Khondaker, S. I.

AU - Mitrelias, T.

AU - Barnes, C. H.W.

AU - Aguiar, J. Albino

AU - Majima, Y.

PY - 2012/8/1

Y1 - 2012/8/1

N2 - In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2O → Cu 2O → Cu 2O + CuO → CuO was detected. Pure Cu 2O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases.

AB - In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO 2/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu 2O → Cu 2O → Cu 2O + CuO → CuO was detected. Pure Cu 2O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300-550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current-voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases.

KW - Annealing

KW - Cupric oxide

KW - Cuprous oxide

KW - Evaporation

KW - Thermal oxidation

KW - Thin films

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84863982281&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.06.043

DO - 10.1016/j.tsf.2012.06.043

M3 - Artículo

AN - SCOPUS:84863982281

SN - 0040-6090

VL - 520

SP - 6368

EP - 6374

JO - Thin Solid Films

JF - Thin Solid Films

IS - 20

ER -