High crystalline quality erbium-doped zirconium oxide films were deposited on Si(100) by electron beam evaporation in high vacuum. Characteristics of light emission in the telecommunication window from erbium oxide crystal zirconium oxide films were investigated before and after furnace annealing in oxygen atmosphere. The luminescence intensity of the erbium-doped thin film after annealing at 900°C was 18 times higher than those before thermal annealing. Also, it was observed a decrease in the intensity of luminescence and the 4I13/2 lifetime with the increase of the erbium concentration, which was analyzed via energy transfer - quenching. The structure environment of the erbium ion in the thin film before and after annealing has been studied by X-ray diffraction. The surface morphology of the films as a function of the annealing temperature and atmosphere showed a significant change. © 2013 Copyright SPIE.
|Original language||American English|
|State||Published - 29 May 2013|
|Event||Proceedings of SPIE - The International Society for Optical Engineering - |
Duration: 1 Jan 2015 → …
|Conference||Proceedings of SPIE - The International Society for Optical Engineering|
|Period||1/01/15 → …|
Rivera, V. A. G., Ferri, F. A., Clabel H., J. L., Kawamura, M. K., Pereira-Da-Silva, M. A., Nunes, L. A. O., Li, M. S., & Marega, E. (2013). High near-infrared emission intensity of Er3+-doped zirconium oxide films on a Si(100) substrate. Paper presented at Proceedings of SPIE - The International Society for Optical Engineering, . https://doi.org/10.1117/12.2004783