High red emission intensity of Eu:Y2O3 films grown on Si(1 0 0)/Si(1 1 1) by electron beam evaporation

V. A.G. Rivera, F. A. Ferri, J. L. Clabel H., M. A. Pereira-Da-Silva, L. A.O. Nunes, M. Siu Li, E. Marega

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12 Scopus citations


High red photoluminescence emission has been obtained at room temperature in Eu3+-doped yttrium oxide thin films following thermal treatment. Films with different thicknesses were deposited on Si(1 0 0) and Si(1 1 1) substrates via electron beam evaporation in a vacuum environment. The films were subsequently annealed in an oxygen atmosphere for 5 h at 900 C. The structural and optical properties of the films were measured before and after annealing. An improvement in the emission intensity was observed as a result of the thermal treatment under a controlled atmosphere. This observation is related to the reduction of non-radiative processes, as verified by the enhancement of the 5D07F2 lifetime values. This improvement in the emission intensity was also analyzed in terms of electric and magnetic dipole transitions (5D07F 2 and 5D07F1 level transitions, respectively). Both transitions are directly related to the site symmetry and, consequently, to the crystalline structure of the films deposited on the Si(1 0 0)/Si(1 1 1) substrates.

Original languageEnglish
Pages (from-to)186-191
Number of pages6
JournalJournal of Luminescence
StatePublished - Apr 2014

Bibliographical note

Funding Information:
This work was financially supported by the Brazilian agencies FAPESP (Processes: 2009/08978-4 and 2011/21293-0 ), and CNPq under CEPOF/INOF .


  • Materials
  • Rare-earths
  • Spectroscopy
  • Thin films


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