Magnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond

Gufei Zhang, J. Vanacken, J. Van De Vondel, W. Decelle, J. Fritzsche, V. V. Moshchalkov, B. L. Willems, S. D. Janssens, K. Haenen, P. Wagner

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Abstract

The systematics of the suppression of superconductivity with increasing magnetic field in boron-doped nanocrystalline chemical vapor deposition diamond is studied in a broad temperature range. At the temperature of TS0 which is above the critical temperature, a plateau is observed in the resistivity versus temperature curve ρ (T) taken at zero magnetic field. When a magnetic field of B= BSN (N=1,2,5) is applied, the plateau moves to low temperature with the thermoresistivity maximum located at T SN (N=1,2,5). The ρ (B) curves, measured at different temperatures around TSN, intersect in the ρ -B plane at the field of B= BSN. By tuning BSN from 0 to 5 T, a series of plateaus in the ρ -T plane and the corresponding intersections in the ρ -B plane are observed. The intersections quadratically chain up in the ρ -B plane, separating the superconducting from the insulating region. The thermoresistivity maxima exponentially group up in the ρ -T plane, thus defining a phase fluctuation zone. The phase boundary, composed of the intersections and separating the superconducting states from the insulating state, is shown to be a generic consequence of granularity. © 2010 American Institute of Physics.
Original languageAmerican English
JournalJournal of Applied Physics
DOIs
StatePublished - 1 Jul 2010

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    Zhang, G., Vanacken, J., Van De Vondel, J., Decelle, W., Fritzsche, J., Moshchalkov, V. V., Willems, B. L., Janssens, S. D., Haenen, K., & Wagner, P. (2010). Magnetic field-driven superconductor-insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond. Journal of Applied Physics. https://doi.org/10.1063/1.3437653