Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure

Y. Galvão Gobato, J. M. Berroir, Y. Guldner, B. Vinter, J. Nagle, P. H. Rivera

Research output: Contribution to journalArticle

Abstract

We report on magnetotunneling studies in a pseudomorphic In0.1Ga0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.
Original languageAmerican English
Pages (from-to)294-297
Number of pages4
JournalBrazilian Journal of Physics
StatePublished - 1 Mar 1996
Externally publishedYes

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    Galvão Gobato, Y., Berroir, J. M., Guldner, Y., Vinter, B., Nagle, J., & Rivera, P. H. (1996). Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure. Brazilian Journal of Physics, 294-297.