Abstract
We report on magnetotunneling studies in a pseudomorphic In0.1Ga0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.
Original language | English |
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Pages (from-to) | 294-297 |
Number of pages | 4 |
Journal | Brazilian Journal of Physics |
Volume | 26 |
Issue number | 1 |
State | Published - Mar 1996 |
Externally published | Yes |