Phase stability in MoTe2 prepared by low temperature Mo tellurization using close space isothermal Te annealing

E. Sánchez-Montejo, G. Santana, A. Domínguez, L. Huerta, L. Hamui, M. López-López, H. Limborço, F. M. Matinaga, M. I.N. da Silva, A. G. de Oliveira, J. C. González, O. de Melo

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In this work, we used isothermal close space (ICS) Te annealings in pure H2 atmosphere for the tellurization of Mo oxide thin films. Differently to previous open tube tellurization annealings, ICS is expected to provide a higher Te vapor pressure because the chamber containing the Te source and the substrate is very small and semi-closed. Then, we used a relatively low temperature of 500 °C at which, according to the phase diagram, 2H phase should be stable. However, we observed that, in all cases, Mo oxide initially transformed to 1T′ before reaching the equilibrium 2H phase. Highly oriented MoTe2 films with the [001] direction perpendicular to the surface were obtained in all samples. On the other hand, according our X-ray photoelectron spectroscopy measurements, we report shifts of 0.38/0.27 eV in the 3d emission of Te/Mo between the two different phases which probably have a chemical origin.

Original languageEnglish
Pages (from-to)317-323
Number of pages7
JournalMaterials Chemistry and Physics
StatePublished - 1 Sep 2017
Externally publishedYes

Bibliographical note

Funding Information:
The authors acknowledge the CAPES (CAPES-INL 04/14, CAPES-PVE 88881.068066/2014-01), CNPq and FAPEMIG funding agencies for the financial support. Technical support of the Laboratory of Crystallography and the Center of Microscopy of the Universidade Federal of Minas Gerais is also acknowledged. Authors are indebted with S. de Roux and E. Romero Ibarra for assistance.

Publisher Copyright:
© 2017 Elsevier B.V.


  • 2D materials
  • MoTe
  • Phase stability
  • Transition metals dichalcogenides


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