In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.
|Title of host publication||2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||4|
|State||Published - Jun 2019|
|Event||46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States|
Duration: 16 Jun 2019 → 21 Jun 2019
|Name||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Conference||46th IEEE Photovoltaic Specialists Conference, PVSC 2019|
|Period||16/06/19 → 21/06/19|
Bibliographical noteFunding Information:
The authors gratefully acknowledge the projects PAPIIT IN 100717 and IA100219 and CONACyT PN 4797. OdM thanks the support of UNAM/DGAPA/PREI. Program.
© 2019 IEEE.