Study of optoelectronic properties of thin MoOx films for application in silicon solar cells

A. Dominguez; O. De Melo; A. Dutt; G. Santana

doi:10.1109/PVSC40753.2019.8980739

Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells

A. Dominguez, O. De Melo, A. Dutt, G. Santana

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

Original language	English
Title of host publication	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2655-2658
Number of pages	4
ISBN (Electronic)	9781728104942
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980739
State	Published - Jun 2019
Externally published	Yes
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Funding Information:
The authors gratefully acknowledge the projects PAPIIT IN 100717 and IA100219 and CONACyT PN 4797. OdM thanks the support of UNAM/DGAPA/PREI. Program.

Publisher Copyright:
© 2019 IEEE.

Access to Document

10.1109/PVSC40753.2019.8980739

Cite this

Dominguez, A., De Melo, O., Dutt, A., & Santana, G. (2019). Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2655-2658). [8980739] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980739

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Dominguez, A, De Melo, O, Dutt, A & Santana, G 2019, Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. in 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980739, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2655-2658, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980739

Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. / Dominguez, A.; De Melo, O.; Dutt, A. et al.

2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2655-2658 8980739 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Dominguez A, De Melo O, Dutt A, Santana G. Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2655-2658. 8980739. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980739