Study of optoelectronic properties of thin MoOx films for application in silicon solar cells

A. Dominguez, O. De Melo, A. Dutt, G. Santana

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

Original languageEnglish
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2655-2658
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Externally publishedYes
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period16/06/1921/06/19

Bibliographical note

Funding Information:
The authors gratefully acknowledge the projects PAPIIT IN 100717 and IA100219 and CONACyT PN 4797. OdM thanks the support of UNAM/DGAPA/PREI. Program.

Publisher Copyright:
© 2019 IEEE.

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