Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure

Y. Galvão Gobato; J. M. Berroir; Y. Guldner; B. Vinter; J. Nagle; P. H. Rivera

Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure

Y. Galvão Gobato, J. M. Berroir, Y. Guldner, B. Vinter, J. Nagle, P. H. Rivera

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

Resumen

We report on magnetotunneling studies in a pseudomorphic In_0.1Ga_0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.

Idioma original	Inglés
Páginas (desde-hasta)	294-297
Número de páginas	4
Publicación	Brazilian Journal of Physics
Volumen	26
N.º	1
Estado	Publicada - mar. 1996
Publicado de forma externa	Sí

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@article{4a0cc94ef23243bd80cca234edd96e0f,

title = "Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure",

abstract = "We report on magnetotunneling studies in a pseudomorphic In0.1Ga0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.",

author = "{Galv{\~a}o Gobato}, Y. and Berroir, {J. M.} and Y. Guldner and B. Vinter and J. Nagle and Rivera, {P. H.}",

year = "1996",

month = mar,

language = "Ingl{\'e}s",

volume = "26",

pages = "294--297",

journal = "Brazilian Journal of Physics",

issn = "0103-9733",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure

AU - Galvão Gobato, Y.

AU - Berroir, J. M.

AU - Guldner, Y.

AU - Vinter, B.

AU - Nagle, J.

AU - Rivera, P. H.

PY - 1996/3

Y1 - 1996/3

N2 - We report on magnetotunneling studies in a pseudomorphic In0.1Ga0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.

AB - We report on magnetotunneling studies in a pseudomorphic In0.1Ga0.9As/AlAs/GaAs structure in a magnetic fields perpendicular or tilted to the tunneling current. In a transverse magnetic field, we have observed a shift to higher voltages and a strong broadening of reso-nant peak in I(V) characteristics. These features are explained by the action of the Lorentz force coupling the parallel and perpendicular motions. In a tilted magnetic field, we have observed structures in I(V) characteristics which corresponds to tunneling in the prewell to the midwell with non-conservation of Landau level index in good agreement with a coherent model in which the effect of the transverse component is treated in a perturbation approach.

UR - http://www.scopus.com/inward/record.url?scp=0030538397&partnerID=8YFLogxK

M3 - Artículo

AN - SCOPUS:0030538397

SN - 0103-9733

VL - 26

SP - 294

EP - 297

JO - Brazilian Journal of Physics

JF - Brazilian Journal of Physics

IS - 1

ER -

Magnetotunneling studies in a pseudomorphic InGaAs/AlAs/GaAs heterostructure

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