Small angle X-ray diffraction study of a-Si:H/a-Ge:H multilayers: Reflectivity modeling and thermal stability

Keyphrases

• A-Si 100%
• Chemical Vapor Deposition Method 50%
• Crystallization 50%
• Crystallization Process 50%
• Heat Treatment 50%
• Hydrogenated Amorphous Silicon-germanium 50%
• Individual Layer Thickness 50%
• Interface Roughness 50%
• Interface Width 50%
• Layer Thickness 50%
• Material Mixing 50%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 50%
• Reflectivity 100%
• Small Angle X-ray Diffraction 100%
• Structural Properties 50%
• Superlattice 50%
• Superlattices 50%
• Thermal Stability 100%
• X-ray Diffraction Study 100%

Engineering

• Chemical Vapor Deposition 50%
• Heat Treatment 50%
• Hydrogenated Amorphous Silicon 50%
• Individual Layer 50%
• Layer Thickness 100%
• Ray Diffraction 100%
• Reflectance 100%
• Structural Property 50%
• Superlattice 100%
• Vapor Deposition 50%
• Vapor Deposition Method 50%

Material Science

• Amorphous Silicon 50%
• Crystallization 50%
• Germanium 50%
• Heat Treatment 50%
• Plasma-Enhanced Chemical Vapor Deposition 50%
• Reflectivity 100%
• Structural Property 50%
• Superlattice 100%
• Thermal Stability 100%
• X-Ray Diffraction 100%