Study of optoelectronic properties of thin MoOx films for application in silicon solar cells

A. Dominguez, O. De Melo, A. Dutt, G. Santana

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

Idioma originalInglés
Título de la publicación alojada2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas2655-2658
Número de páginas4
ISBN (versión digital)9781728104942
DOI
EstadoPublicada - jun. 2019
Publicado de forma externa
Evento46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, Estados Unidos
Duración: 16 jun. 201921 jun. 2019

Serie de la publicación

NombreConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)0160-8371

Conferencia

Conferencia46th IEEE Photovoltaic Specialists Conference, PVSC 2019
País/TerritorioEstados Unidos
CiudadChicago
Período16/06/1921/06/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

Huella

Profundice en los temas de investigación de 'Study of optoelectronic properties of thin MoOx films for application in silicon solar cells'. En conjunto forman una huella única.

Citar esto