Study of optoelectronic properties of thin MoOx films for application in silicon solar cells

A. Dominguez; O. De Melo; A. Dutt; G. Santana

doi:10.1109/PVSC40753.2019.8980739

Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells

A. Dominguez, O. De Melo, A. Dutt, G. Santana

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

1 Cita (Scopus)

Resumen

In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

Idioma original	Inglés
Título de la publicación alojada	2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	2655-2658
Número de páginas	4
ISBN (versión digital)	9781728104942
DOI	https://doi.org/10.1109/PVSC40753.2019.8980739
Estado	Publicada - jun. 2019
Publicado de forma externa	Sí
Evento	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, Estados Unidos Duración: 16 jun. 2019 → 21 jun. 2019

Serie de la publicación

Nombre	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)	0160-8371

Conferencia

Conferencia	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
País/Territorio	Estados Unidos
Ciudad	Chicago
Período	16/06/19 → 21/06/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

Acceder al documento

10.1109/PVSC40753.2019.8980739

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Dominguez, A., De Melo, O., Dutt, A., & Santana, G. (2019). Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. En 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 2655-2658). [8980739] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980739

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abstract = "In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.",

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Dominguez, A, De Melo, O, Dutt, A & Santana, G 2019, Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. En 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019., 8980739, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2655-2658, 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, Estados Unidos, 16/06/19. https://doi.org/10.1109/PVSC40753.2019.8980739

Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. / Dominguez, A.; De Melo, O.; Dutt, A. et al.

2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2655-2658 8980739 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

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AB - In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

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Dominguez A, De Melo O, Dutt A, Santana G. Study of optoelectronic properties of thin MoO_x films for application in silicon solar cells. En 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 2655-2658. 8980739. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC40753.2019.8980739