Study of optoelectronic properties of thin MoOx films for application in silicon solar cells

A. Dominguez, O. De Melo, A. Dutt, G. Santana

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

In this work, a study is made on the optoelectronic properties of thin MoOX films, with 2 < x < 3. To do this, thin MoOX films were grown with approximate thicknesses of 10, 15 and 20nm by sputtering, which were deposited on glass, and Si-n / p wafers with the aim of subjecting them to different characterization techniques. It is observed that the obtained MoOx films can form a p-n junction if deposited on a Si-n wafer or behave as a hole-extracting layer if deposited on Si-p and the above-mentioned properties shown a substantial improvement after a thermal treatment at 200°C in high vacuum for 30 minutes.

Idioma originalInglés
Título de la publicación alojada2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas2655-2658
Número de páginas4
ISBN (versión digital)9781728104942
DOI
EstadoPublicada - jun 2019
Publicado de forma externa
Evento46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, Estados Unidos
Duración: 16 jun 201921 jun 2019

Serie de la publicación

NombreConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (versión impresa)0160-8371

Conferencia

Conferencia46th IEEE Photovoltaic Specialists Conference, PVSC 2019
País/TerritorioEstados Unidos
CiudadChicago
Período16/06/1921/06/19

Nota bibliográfica

Publisher Copyright:
© 2019 IEEE.

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